Micron has introduced the world’s first G9-based UFS 4.1 and UFS 3.1 storage solutions, promising faster speeds, better efficiency, and improved AI performance for future smartphones. Announced yesterday, these new storage chips will first appear in flagship devices shortly after Micron’s 1y LPDDR5X memory, which is set to launch in early 2026.
What’s New in Micron’s UFS 4.1 and UFS 3.1?
Built on Micron’s G9 process node, the UFS 4.1 and UFS 3.1 chips will offer capacities ranging from 256GB to 1TB, catering to ultra-thin and foldable smartphones where storage efficiency is crucial. The new storage solutions increase power efficiency and improve read/write speeds, making them a key upgrade for next-gen mobile devices.
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Beyond hardware improvements, Micron is also integrating software optimizations to enhance storage efficiency and AI-driven performance. Some of the key features include:
- Zoned UFS (UFS 4.1 only) – Improves read-write efficiency and reduces write amplification, leading to longer-lasting storage performance.
- Data Defragmentation (UFS 4.1 only) – Increases data relocation and defragmentation efficiency by 60%, reducing storage slowdowns.
- Pinned WriteBooster (UFS 4.1 only) – Enables 30% faster access to frequently used data stored in the WriteBooster buffer.
- Intelligent Latency Tracker (UFS 4.1 & UFS 3.1) – Automatically analyzes latency logs, helping to debug and optimize storage performance in real-time.
Micron’s latest storage solutions will play a crucial role in enabling on-device AI features, improving performance in AI-driven applications like real-time translation, image processing, and generative AI models. The enhanced efficiency and faster data access should also lead to smoother multitasking and quicker app launches.
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While flagship devices with Micron’s UFS 4.1 and UFS 3.1 chips are expected to launch soon, the 1y LPDDR5X memory won’t arrive until early 2026.